2 edition of Theoretical study of electron mobility in modulation-doped aluminum gallium arsenide found in the catalog.
Theoretical study of electron mobility in modulation-doped aluminum gallium arsenide
by National Aeronautics and Space Administration, Scientific and Technical Information Branch, For sale by the National Technical Information Service] in Washington, D.C, [Springfield, Va
Written in English
|Series||NASA technical paper -- 2170|
|Contributions||United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch|
|The Physical Object|
|Pagination||7 p. :|
KEYWORDS: Indium arsenide, Quantum efficiency, Doping, Gallium antimonide, Semiconductor lasers, Diodes, Terahertz radiation, Phonons, Acoustics, Heterojunctions Read Abstract + This paper will illustrate the potential of InAs/GaSb broken-gap structures for providing a solution to the well-known and long-standing terahertz (THz) frequency gap. Gallium Arsenide (GaAs) – Electron Velocity-Field Behaviour. In this post, the graph between the electron field and the electron velocity is explained. The reason for the decrease in the drift velocity of the electrons have also been explained in detail.
When the heterostructure FETs (HFET or MOD- FET for modulation-doped FET), also known by many other acronyms (HEMT for high electron mobility transistor, SDHT for selectively doped heterojunction transistor, TGFET for two-dimensional electron gas FET, SISFET for semiconductor-insulator-semiconductor FET, HIGFET for heterojunction insulated-gate. currently possible. Gallium Arsenide is one candidate material for use in semiconductor spintronic devices and as such detailed study of the spin-tronic properties of Gallium Arsenide is required. In this thesis we develop a semiclassical approach to the simulation of the electron population in Gal-lium Arsenide.
1. Antisite Related Defects in Semi-Insulating Gallium Arsenide (Invited) 2. Optical Absorption into a Lattice-Coupled Resonance. 3. Theoretical Study of Carrier Capture Assisted by Phonons: Application to the EL2, E3, A and B Defects in GaAs. 4. Determination of the Cross-Section for Light Induced Metastable Transition of the EL2 Defect. 5. Home > Press > Getting electrons to move in a semiconductor: Gallium oxide shows high electron mobility, making it promising for better and cheaper devices Schematic stack and the scanning electron microscopic image of the β-(AlxGa1-x)2O3/Ga2O3 modulation-doped field effect transistor.
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Get this from a library. Theoretical study of electron mobility in modulation-doped aluminum gallium arsenide.
[Benjamin Segall; United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch.].
The effects of electron‐electron scattering and nonparabolic energy band shape on electron mobility in degenerate materials are investigated. Mobility calculations as a function of electron concentration and temperature are compared to experimental by: Theoretical study of electron mobility in modulation-doped aluminum gallium arsenide / By Benjamin.
Segall and United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch. Abstract. STAR category "June "buted to depository libraries in es bibliographical.
A theoretical study of the mobility at moderately high temperatures, T is greater than or equal to K, is undertaken. It is suggested that, as usual, the dominant scattering mechanism. Abstract. A theoretical analysis is made of the cutoff frequency for the amplification of space-charge waves in an n-GaAs thin-film semiconductor structure, taking into account the dependence of the drift velocity and the differential electron mobility on the electron is shown that the dependence of the cutoff frequency on the electron density in the film has a maximum, Cited by: 2.
We performed a theoretical study of the electron mobility in strained Si 1−x C x alloys with a continuous variation in the carbon concentration. The study is useful for future device design and simulation. In this paper, we present results for electron bulk mobility in silicon–carbon by: 2.
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states.
Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility. Non-Linear Electron Mobility in n-Doped (ZB), a theoretical study of the electron drift velocity was performed in this work.
half that of gallium arsenide‐based lasers. For weakly doped GaAs at temperature close to K, electron drift mobility µ n =(/T) 2/3 cm 2 V-1 s Drift and Hall mobility versus electron concentration for different degrees of compensation T= 77 K (Rode ).
Drift and Hall mobility versus electron concentration for different degrees of compensation T= K (Rode ). The thesis concludes with a study of silicon migration in modulation doped GaAs/AlGaAs heterostructures.
Low temperature Hall measurements of annealed samples were used to show that silicon diffusion can degrade the electron mobility. Evidence is presented of the strong localisation of the 2 dimensional electrons in the unannealed : Veli-Matti Airaksinen. Indium Arsenide Electron Mass Effective Electron Effective Electron Mass These keywords were added by machine and not by the authors.
This process is experimental and the keywords may be updated as the learning algorithm by: 1. However, the problem is that the dopants also scatter electrons, limiting electron mobility in the material.
To solve this problem, the researchers used modulation doping. The approach was first developed in by Takashi Mimura to create a gallium arsenide high-electron-mobility transistor (HEMT), which won the Kyoto Prize in Gallium Arsenide Aluminum Gallium Arsenide ABSTRACT (Continue on rever*e side If necesary and Identify by block number) The electron-transport characteristics of modulation-doped GaAs-AlxGalxAS heterostructures have been measured over a wide range of temperatures using a diverse set of device by: 1.
Electron Hall mobility versus temperature for different electron concentration: full triangles n o = 410 15 cm -3, circles n o = 410 16cm -3, open triangles n o = 10 16cm Solid curve-calculation for pure InAs. GALLIUM ARSENIDE HETEROSTRUCTURES L Kronig-Penney (Tight-Binding) Model for Superlattice Electronic States A simplified calculation of the electronic energy states of the superlattice can be made by assuming a one-dimensional Kronig- Penney by: 1.
To solve this problem, the researchers used a technique known as modulation doping. The approach was first developed in by Takashi Mimura to create a gallium arsenide high-electron mobility transistor, which won the Kyoto Prize in The electronic band structure, total density of state (DOS) and band gap energy were calculated for Gallium-Arsenide and Aluminium-Arsenide in diamond structures.
The result of minimum total energy and computational time obtained from the experimental lattice constant A for both Gallium Arsenide and Aluminium Arsenide iseV Author: J.
Owolabi, M. Onimisi, S. Abdu, G. Olowomofe. The mean energy necessary to generate an electron-hole pair in gallium arsenide by x and γ photons has been measured in the – K temperature range. The experimental apparatus consists of a Schottky junction on a high-quality epitaxial GaAs, a silicon detector that generates a reference charge signal and highly stable low-noise by: ELECTRON MOBILITY IN HEAVILY DOPED GALLIUM ARSENIDE [E.H.
& Yee, S.S. Stevens] on *FREE* shipping on qualifying : Stevens, E.H. & Yee, S.S. Aluminium arsenide or aluminum arsenide (Al As) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.
(Al As) can form a superlattice with gallium arsenide (Ga As) which results in its semiconductor al formula: AlAs. The approach was first developed in by Takashi Mimura to create a gallium arsenide high-electron mobility transistor, which won the Kyoto Prize in While it is now a commonly used technique to achieve high mobility, its application to Ga 2 O 3.
The energy gap between valence band and conduction band in GaAs is eV. Among, three most popular semiconductor materials are Silicon (Si), Germanium (Ga) and Gallium Arsenide (GaAs).
GaAs has the largest energy gap between valence band and the conduction band. From earlythe use of GaAs is growing up.
For manufacturing very .It has a higher saturated electron velocity and higher electron mobility, allowing gallium arsenide transistors to function at frequencies in excess of GHz.
GaAs devices are relatively insensitive to overheating, owing to their wider energy band gap, and they also tend to create less noise (disturbance in an electrical signal) in electronic circuits than silicon Chemical formula: GaAs.